Assessing the Impact of Phonon-assisted Tunneling on Electronic Conductivity in Graphene Nanoribbons and Oxides Ones

Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent
conductivity and I-V characteristics measured by various investigators for graphene nanoribbons and
oxides ones. Proposed model describes well not only current dependence on temperature but also
the temperature-dependent I-V data using the same set of parameters characterizing material under
investigation. The values of active phonons energy and field strength for tunneling are estimated from
the fit of current dependence on temperature and I-V/T data with the phonon-assisted tunneling
theory.